NONVOLATILE MEMORIES-Materials, Devices and Applications

2-Volume set

   
   2-Volume Set

Edited by
Tseung-Yuen Tseng and Simon M. Sze
National Chiao Tung University, Taiwan
    2012, ca. 850 pages, Hardcover
ISBN: 1-58883-250-3
US$695.00




 

ABOUT THIS BOOK
Nonvolatile semiconductor memory (NVSM) is one of the most important discoveries in the field of electron devices since the invention of the transistor. Invented by D. Kahng and S.M. Sze in 1967, NVSM, today, is the largest electronic industry in the world. This single invention has subsequently given rise to a large family of memory devices including flash memory and electrically erasable programmable read-only memory (EEPROM). All modern electronic devices, like mobile phones, notebook computers, digital cameras, MP3 music players, personal digital assistants, digital televisions, automotive engine control units, portable medical diagnostic systems, USB flash personal discs, and global positioning systems, are all based on NVSM. In the past 20 years, NVSM’s minimum feature length has been scaled down from 0.8 ?m to sub-20 nm—a 40-fold reduction. Many alternative NVSM technologies are being developed to reduce the size (sub-10 nm) and improve device performance. Nonvolatile Memories is a two-volume book containing 32 state-of-the-art chapters written by 71 world-leading experts on nonvolatile memories. It includes comprehensive coverage of the physics, material science, device engineering, and applications of nonvolatile memory devices. The book summarizes the most recent advances and future trends in the field of nonvolatile semiconductor memory. This book is intended as a reference book for engineers and scientists actively involved in semiconductor device research and development. It also serves as a textbook for senior undergraduate and graduate students in applied physics, materials science and engineering, electrical and electronics engineering, who have already acquired a basic understanding of semiconductor device physics.

CONTENTS
Volume 1
An Introduction to Nonvolatile Memories, Tseung-Yuen Tseng and Simon M. Sze
Silicon-Based Thin-Film Transistor Nonvolatile Memories, Andrew J. Walker
Nonvolatile Memory Devices with Nanocrystals and Dielectrics, Ting-Chang Chang, Fu-Yen Jian, Shih-Ching Chen, and Chih-Tsung Tsai
Electrical Properties and Nonvolatile Memory Applications of Semiconductor Nanocrystals and Metal Nanoparticles, Y. Liu and T. P. Chen
Material and Geometric Design of Nanocrystal Flash Memory, Shantanu R. Rajwade and Edwin C. Kan
Self-Consistent Quantum-Mechanical Analysis of Nanocrystal Flash-Memory Operation, Jeanlex Soares de Sousa and
Jean-Pierre Leburton
Si Nanocrystal Memories: From Materials to Device Characteristics, Salvatore Lombardo and Cosimo Gerardi
Nonvolatile Memories Using Si Quantum Dot Double-Junction Tunnel Layers, Ryuji Ohba
Application of a High-Dielectric for a Flash-Memory Device, Jong Kyung Park and Byung Jin Cho
Development of Non-Volatile Flash Memory Using a High-k Charge-Trapping Layer, Gang Zhang and Won Jong Yoo
Ultra-High-Density Non-Volatile Flash Memory Devices Realized on CMOS Si Nanowires, Dim-Lee Kwong, Yuan Sun, Yu Hongyu, Navab Singh, and Guo-Qiang Lo
Emerging Constraints on NAND Flash Memory Reliability, Christian Monzio Compagnoni, Alessandro S. Spinelli, Andrea L. Lacaita,
Andrea Ghetti, and Angelo Visconti
Ferroelectric Memory: Materials and Devices, Tian-Ling Ren
The Material Fabrication, Device Structure, and Working Mechanism of Ferroelectric Memory, A. Q. Jiang and T. A. Tang
Overview, Future Prospects, and Applications of FeRAMs, Daisaburo Takashima
Magnetoresistance Behavior of Ferromagnetic Nanorings, A. O. Adeyeye and S. Jain
Volume 2
Phase Change Materials: Research Developments and Device Applications, Kuan-Neng Chen, Hsiang-Lan Lung, Yu Zhu, Huai-Yu Cheng, and Frederick T. Chen
Phase Change Memory, Dae-Hwan Kang, Ki-Bum Kim, Byung-Ki Cheong, and Hong-Sik Jeong
Phase Change Random Access Memory, L. P. Shi and R. Zhao
Phase Change Memory Physics-Based Modeling: Electrical Characteristics, Scaling, and Reliability, Daniele Ielmini
Metal-Oxide-Based Resistive-Switching Memory: Materials, Device Scaling, and Technology Design, Jinfeng Kang, Bin Gao, and Bin Yu
Resistance Switching Effects in Transition Metal Oxide Thin Films for Nonvolatile Memory Applications, Dinghua Bao
Resistive-Random Access Memory Based on Amorphous Films, Yuchao Yang and Wei Lu
Overview of Metal-Oxide Resistive Memory, Chia Hua Ho and Fu-Liang Yang
Resistive-Switching Memory Devises Based on Metal Oxides: Modeling of Unipolar Switching, Reliability, and Scaling, Carlo Cagli and Daniele Ielmini
Organic and Polymer Nonvolatile Memories: Materials, Devices, and Working Mechanisms, Wei Lek Kwan and Yang Yang
Material, Device, and Circuit of Organic Nonvolatile Memory, Zingway Pei and Heng-Tien Lin
Organic/Polymeric Films with Resistive-Switching Behavior and Their Application as Nonvolatile Memory Devices, Jianyong Ouyang
Organic Resistive Switching for Nonvolatile Memory Application, Byungjin Cho, Tae-Wook Kim, Yongsung Ji, Sunghoon Song, and
Takhee Lee
Nonvolatile Memories for Radiation-Hardened Applications, Xiaoli He and Wei Wang
Nonvolatile Quantum Memory, Oleksandr Voskoboynikov
Search for Frontrunners Among Emerging Non-Volatile Memory Technologies: Sttram or Resistive Switching Random Access Memories or Others, Alois Gutmann and Jin-Ping Han

READERSHIP
The 2-volume book is intended as a reference book for engineers and scientists actively involved in semiconductor device research and development. It also serves as a textbook for senior undergraduate and graduate students in applied physics, semiconductor physics, materials science and engineering, electrical and electronics engineering, device engineering who have already acquired a basic understanding of semiconductor device physics.


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