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Journal of Nanoscience and Nanotechnology
ISSN: 1533-4880 (Print); EISSN: 1533-4899 (Online)
Copyright © 2000- American Scientific Publishers. All Rights Reserved.


 
EDITOR-IN-CHIEF

Hari Singh Nalwa, USA

Editorial Office:
Journal of Nanoscience and Nanotechnology
American Scientific Publishers
26650 The Old Road, Suite 208
Valencia, California 91381-0751, USA
Tel. (661) 799-7200
Fax: (661) 799-7230
E-mail: jnn@aspbs.com

 
NORTH AMERICAN EDITOR
Wei Chen
Department of Physics
The University of Texas at Arlington
502 Yates Street, 108 Science Hall
Arlington, Texas 76019-0059, USA
Tel.: (817) 272-1064
Fax: (817) 272-3637
 
EUROPEAN EDITOR
Dr. Davide Barreca
Molecular Science and Technology Institute
National Council of Research
C/o Department of Chemistry, Padova University
Via Marzolo 1, I-35131 Padova, ITALY
Phone: +39-049-8275170
 
ASIAN EDITOR
Katsuhiko Ariga, PhD
Advanced Materials Laboratory
National Institute for Materials Science
1-1 Namiki, Tsukuba, Ibaraki 305-0044, JAPAN
Phone/Fax: +81-29-860-4832
 
ASIAN EDITOR (China)
Chunli Bai, PhD
Institute of Chemistry
Chinese Academy of Sciences
Beijing 100080, China
Tel. & Fax: +86-10-625-58934
 
ASSOCIATE EDITORS
A. Balakrishnan (Nanomaterials for Energy); India.
V. A. Basiuk (Carbon Nanomaterials); México.
M. Bousmina (Nanomaterials/nanocomposites); Morocco.
J. H. Choy (Nano-Biomaterials); South Korea.
T. Cui (NEMS/Nanoelectronics); USA.
J. González (Magnetic Nanomaterials); Spain.
N. He (Nanotechnology); China.
L. D. Liao (Nanoneuroscience /Nanomedicine); Singapore.
Y. Lin (Sensors); USA.
O. N. Oliveira Jr. (Nanomaterials); Brazil.
C. S. Ozkan (Nanostructured Materials); USA.
V. Patravale (Pharmaceutics/Nanobiotechnology); India.
A. R. Pohlmann (Nanomedicine/pharmaceutics); Brazil.
M. Ramalingam (Nanobiomaterials/nanomedicine); France.
S. Ramaprabhu (Nanomaterials); India.
S. Samal (Nanomaterials); South Korea
S. Q. Shi (Nanomaterials); Hong Kong.
S. Sinha Ray (Polymer Nanocomposites); CSIR,South Africa.
T.Y. Tseng (Nanomaterials); Taiwan.
A. Umar (Nanomaterials); Saudi Arabia.
A. Vinu (Nanomaterials); Australia.
A. Kasi Viswanath (Semiconductors/Nanoelectronics); India.
R. H.Xie (Nano-Optics, Nanoelectronics, Nanoclusters); China.
D. Xue (Nanomaterials); China.
G. Y. Yeom (Nanomaterials); South Korea.
Y. L. Zhao (Nanomaterials); China.
 
EDITORIAL BOARD:

P. M. Ajayan, USA, A. Balandin, USA, S. Bandyopadhyay, USA, M. I. Baraton, France,
F. Besenbacher, Denmark, W. J. Blau, Ireland, H. G. Craighead, USA, E. Dickey, USA,
P. Guo, USA, J. P. Hill, Japan, T. Imae, Japan/Taiwan, A. Inoue, Japan, K. Kuroda, Japan,
E. R. Leite, Brazil, A. Leson, Germany, C. M. Lieber, USA, H. K. Liu, Australia, J. F. Löffler, Switzerland,
G. Q. Lu, Australia, B. R. Mehta, India, R. Menon, India, E. Meyer, Switzerland, M. Meyyappan, USA,
P. Milani, Italy, A. G. Nassiopoulou, Greece, K. Niihara, Japan , P. Poulin, France, F. Peeters, Belgium,
P. M. Petroff, USA, C. Politis, Greece, G. K. S. Prakash, USA, A. M. Rao, USA, C. N. R. Rao, India,
M. A. Reed, USA, R. Reifenberger, USA, H. E. Schaefer, Germany, T. Schalkhammer, The Netherlands,
S. Seal, USA, N. C. Seeman, USA, R. W. Siegel, USA, R. Singh, USA, S. Singh, UK, S. B. Sinnott, USA
, U. B. Sleytr, Austria, H. I. Smith, USA, B. Z. Tang, China, R. Ugajin, Japan, Y. K. Vohra, USA,
M. Werner, Germany, B. M. Weckhuysen, The Netherlands, Y. Wu, Singapore.


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