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Journal of Nanoscience and Nanotechnology
ISSN: 1533-4880 (Print); EISSN: 1533-4899 (Online)
Copyright © 2000- American Scientific Publishers. All Rights Reserved.


 
EDITOR-IN-CHIEF

Hari Singh Nalwa, USA

Editorial Office:
Journal of Nanoscience and Nanotechnology
American Scientific Publishers
26650 The Old Road, Suite 208
Valencia, California 91381-0751, USA
Tel. (661) 799-7200
Fax: (661) 799-7230
E-mail: jnn@aspbs.com

 
NORTH AMERICAN EDITOR
Wei Chen
Department of Physics
The University of Texas at Arlington
502 Yates Street, 108 Science Hall
Arlington, Texas 76019-0059, USA
Tel.: (817) 272-1064
Fax: (817) 272-3637
 
EUROPEAN EDITOR
Dr. Davide Barreca
Molecular Science and Technology Institute
National Council of Research
C/o Department of Chemistry, Padova University
Via Marzolo 1, I-35131 Padova, ITALY
Phone: +39-049-8275170
 
ASIAN EDITOR
Katsuhiko Ariga, PhD
Advanced Materials Laboratory
National Institute for Materials Science
1-1 Namiki, Tsukuba, Ibaraki 305-0044, JAPAN
Phone/Fax: +81-29-860-4832
 
ASIAN EDITOR (China)
Chunli Bai
Institute of Chemistry
Chinese Academy of Sciences
Beijing 100080, China
Tel. & Fax: +86-10-625-58934
 
ASSOCIATE EDITORS
A. Balakrishnan (Nanomaterials for Energy); India.
V. A. Basiuk (Carbon Nanomaterials); México.
M. Bousmina (Nanomaterials/nanocomposites); Morocco.
J. H. Choy (Nano-Biomaterials); South Korea.
T. Cui (NEMS/Nanoelectronics); USA.
J. González (Magnetic Nanomaterials); Spain.
N. He (Nanotechnology); China.
L. D. Liao (Nanoneuroscience /Nanomedicine); Singapore.
Y. Lin (Sensors); USA.
O. N. Oliveira Jr. (Nanomaterials); Brazil.
C. S. Ozkan (Nanostructured Materials); USA.
V. Patravale (Pharmaceutics/Nanobiotechnology); India.
A. R. Pohlmann (Nanomedicine/pharmaceutics); Brazil.
M. Ramalingam (Nanobiomaterials/nanomedicine); France.
S. Ramaprabhu (Nanomaterials); India.
S. Q. Shi (Nanomaterials); Hong Kong.
S. Sinha Ray (Polymer Nanocomposites); CSIR,South Africa.
T.Y. Tseng (Nanomaterials); Taiwan.
A. Umar (Nanomaterials); Saudi Arabia.
A. Vinu (Nanomaterials); Australia.
A. Kasi Viswanath (Semiconductors/Nanoelectronics); India.
R. H.Xie (Nano-Optics, Nanoelectronics, Nanoclusters); China.
D. Xue (Nanomaterials); China.
G. Y. Yeom (Nanomaterials); South Korea.
Y. L. Zhao (Nanomaterials); China.
 
EDITORIAL BOARD:

P. M. Ajayan, USA, A. Balandin, USA, S. Bandyopadhyay, USA, M. I. Baraton, France,
F. Besenbacher, Denmark, W. J. Blau, Ireland, H. G. Craighead, USA, E. Dickey, USA,
P. Guo, USA, J. P. Hill, Japan, T. Imae, Japan/Taiwan, A. Inoue, Japan, K. Kuroda, Japan,
E. R. Leite, Brazil, A. Leson, Germany, C. M. Lieber, USA, H. K. Liu, Australia, J. F. Löffler, Switzerland,
G. Q. Lu, Australia, B. R. Mehta, India, R. Menon, India, E. Meyer, Switzerland, M. Meyyappan, USA,
P. Milani, Italy, A. K. Mohanty, Canada, A. G. Nassiopoulou, Greece, K. Niihara, Japan , R. E. Palmer, UK,
P. Poulin
, France, F. Peeters, Belgium, P. M. Petroff, USA, C. Politis, Greece, G. K. S. Prakash, USA,
A. M. Rao, USA, C. N. R. Rao, India, M. N. V. Ravi Kumar, UK, M. A. Reed, USA, R. Reifenberger, USA,
H. E. Schaefer, Germany, T. Schalkhammer, The Netherlands, S. Seal, USA, N. C. Seeman, USA,
R. W. Siegel, USA, R. Singh, USA, S. Singh, UK, S. B. Sinnott, USA, U. B. Sleytr, Austria, H. I. Smith, USA,
B. Z. Tang, China, R. Ugajin, Japan, Y. K. Vohra, USA, M. Werner, Germany, B. M. Weckhuysen, The Netherlands,
Y. Wu, Singapore.


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