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Journal of Nanoelectronics and Optoelectronics
ISSN: 1555-130X (Print): EISSN: 1555-1318 (Online)
Copyright © 2000- American Scientific Publishers. All Rights Reserved.

 
EDITOR-IN-CHIEF
Professor Alexander A. Balandin
Department of Electrical Engineering
University of California
Riverside, California 92521-0425, USA
Tel.: (951) 827-2351
Fax: (951) 827-2425
Email: jnoeditorsoffice@sbcglobal.net
 
EDITOR FOR EUROPE AND ASIA
Professor Denis L. Nika
Department of Theoretical Physics
Moldova State University
Chisinau, MD-2009, Moldova
 
ADVISORY BOARD MEMBERS
Prof. Edwin C. Kan, Cornell University, USA
Prof. Konstantin K. Likharev, Stony Brook University, USA
Prof. Michael Shur, Rensselaer Polytechnic Institute, USA
Prof. Michael Stroscio, University of Illinois at Chicago, USA
Prof. Kang L. Wang, University of California at Los Angeles, USA
Prof. Eli Yablonovitch, University of California at Los Angeles, USA
 
INTERNATIONAL EDITORIAL BOARD MEMBERS
Andrey Akimov, A. F.Ioffe Physico-Technical Institute, Russia
Marc Cahay, University of Cincinnati, USA
Zeynep Celik-Butler, University of Texas at Arlington, USA
Tianhong Cui, University of Minnesota, USA
Jamal Deen, McMaster University, Canada
Jozef T. Devreese, Universiteit Antwerpen, Belgium
Andrei G. Fedorov, Georgia Institute of Technology, USA
Andrea C. Ferrari, University of Cambridge, UK
Ying Fu, Royal Institute of Technology, Sweden
Erez Hasman, Technion - Israel Institute of Technology, Israel
Zheng Hu, Nanjing University, China
Sergei Kalinin, Oak Ridge National Laboratory, USA
Nikolay Kalugin, New Mexico Tech, USA
Sakhrat Khizroev, University of California at Riverside, USA
Roger Lake, University of California at Riverside, USA
Liberato Manna, National Nanotechnology Laboratory at Lecce, Italy
Vladimir Mitin, University at Buffalo, USA
Daniel Murray, University of British Columbia Okanagan, Canada
Thomas Nann, Freiburg Materials Research Center, Germany
Arokia Nathan, University of Waterloo, Canada
Elena Obraztsova, A.M. Prokhorov General Physics Institute, Russia
A. K. Raychaudhuri, S.N. Bose National Centre for Basic Sciences, India
Ikuo Suemune, Hokkaido University, Japan
Toshiaki Suhara, Osaka University, Japan
Sebastian Volz, Ecole Centrale - Paris, France
Xiang Zhang, University of California at Berkeley, USA
Dongfeng Xue, Changchun Institute of Applied Chemistry/CAS, China
Victor Zhirnov, Semiconductor Research Corporation, USA
 
 
 
 
 
 
 
 
 
 
 
 
 
 

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