Journal of Low Power Electronics
EDITOR-IN-CHIEF
Dr. Patrick GIRARD
Laboratory of Informatics, Robotics and
Microelectronics of Montpellier (LIRMM)
161 rue Ada, 34392 Montpellier cedex 05, FRANCE
Tel.: (+33) 467 418 629 Fax: (+33) 467 418 500
Email: girard@lirmm.fr
EDITORIAL BOARD
E. Acar, IBM Research Laboratory., USA
A. J. Acosta, University of Sevilla, Spain
E. Alarcon, UPC Barcelona, Spain
M. Alioto, University of Siena, Italy
B. M. Al-Hashimi, University of Southampton, UK
Mohab H. Anis, The American University in Cairo, Egypt
M. Badaroglu, IMEC, Belgium
S. Badrudduza, Freescale Semiconductors Inc., USA
M. Belleville, CEA-Leti, France
M. J. Bellido, University of Sevilla, Spain
L. Benini, University of Bologna, Italy
S. Bhunia, Case Western Reserve University, USA
E. I. Boemo, University of Autonoma Madrid, Spain
W. Burleson, University of Massachusetts Amherst, USA
Y. Cao, Arizona State University, USA
M. Chan, Hong Kong University of Science & Technology, China
N. Chang, Seoul National University, South Korea
D. Chen, University of Illinois, Urbana-Champaign, USA
K. Choi, Seoul National University, South Korea
V. De, Intel Corporation, USA
W. Dehaene, KU Leuven, Belgium
J. Di, University of Arkansas, Fayetteville, USA
S. Fan, Fairchild Semiconductor, USA
Y. Fei, Northeastern University, USA
J. Figueras, University Polytechnic Catalunya, Spain
E. G. Friedman, University of Rochester, USA
A. García-Ortiz, University of Bremen, Germany
K. Ghose, State University of New York, Binghamton, USA
E. Guidetti, STMicroelectronics Inc., Switzerland
Y. Ha, National University of Singapore, Singapore
J. Haid, Infineon Technologies, Austria
J. Henkel, University of karlsruhe, Germany
M. Hirech, Synopsys Inc. USA
T. Ishihara, Kyoto University, Japan
N. Jha, Princeton University, USA
A. K. Jones, University of Pittsburgh, USA
J. Kim, Seoul National University, South Korea
E. Kursun, IBM Thomas J. Watson Research Labs, USA
L. Lavagno, Cadence Design Systems, Italy
J. D. Legat, Universite Catholique de Louvain, Belgium
P. Li, Texas A&M University, USA
X. Li, Carnegie Mellon University, USA
X. Li, Chinese Academy of Sciences, Beijing, China
C. Lichtenau, IBM Research Labs., Germany
A.J. Lopez-Martin, University of Navarra, Spain
E. Macci, Politecnico di Torino, Italy
Y. Manoli, University of Freiburg, Germany
P. Mattavelli, Virginia Tech, USA
M.H. Mickle, University of Pittsburgh, USA
S. Mohanty, University of North Texas, Denton, USA
K. Muhammad, Mstar Semiconductor, USA
N. Muralimanohar, HP Labs, USA
N. Naganathan, LSI Corporation, USA
V. Narayanan, Pennsylvania State University, USA
S. Nazarian, University of Southern California, USA
W. Nebel, University of Oldenburg, Germany
W.T. Ng, University of Toronto, Canada
B. Nikolic, University of California at Berkeley, USA
Vojin G. Oklobdzija, University of Texas at Dallas, USA
R. Panda, Oracle America Inc., USA
B. C. Paul, GlobalFoundries, USA
M. Pedram, University of Southern California, USA
P. Petrov, University of Maryland, USA
C. Piguet, CSEM, Switzerland
J. Pineda de Gyvez, NXP Semiconductors, The Netherlands
A. Raghunathan, Purdue University, USA
C. P. Ravikumar, Texas Instruments, India
M. Renaudin, TIEMPO SAS, France
G. A. Rincón-Mora, Georgia Institute of Technology, USA
K. Roy, Purdue University, USA
M. Sarrafzadeh, UCLA, USA
O. Sentieys, ENSSAT University of Rennes, France
L. Shang, University of Colorado at Boulder, USA
R. Singh, Clemson University, USA
D. Soudris, National Technical University of Athens, Greece
M.R. Stan, University of Virginia, USA
N. T. Tchamov, Tampere University of Technology, Finland
M. Tehranipoor, University of Connecticut, USA
J. P. Teixeira, Institute of Systems and Computer Engineering, Portugal
N. A. Touba, University of Texas at Austin, USA
T. Tuan, Xilinx Research Labs., USA
A. Tyagi, Iowa State University, USA
K. Uchiyama, Hitachi, Ltd., Japan
X. Vera, Intel Labs, Spain
S. Verma, Intel Corp., USA
G. Y. Wei, Harvard University, USA
M.H. White, Ohio State University, USA
P. Wong, Stanford University, USA
H. J. Wunderlich, University of Stuttgart, Germany
H. Yang, Tsinghua University, China
S. Yoo, Postech University, South Korea
H. Yu, Nanyang Technological University, Singapore